Semiconductor device

ABSTRACT

A semiconductor device includes: a first electrode terminal; a second electrode terminal; a semiconductor element having an electrode on one surface connected to one surface of the first electrode terminal; a wire that connects an electrode on the other surface of the semiconductor element and the second electrode terminal; and a resin portion formed of an insulator covering the semiconductor element, a part of the second electrode terminal, and the one surface of the first electrode terminal, wherein a chamfered portion is formed on at least one of end portions where the first electrode terminal and the second electrode terminal face each other.

The present application is a continuation application and claimspriority under 35 U.S.C 120 to U.S. patent application Ser. No.16/618,885 filed on Dec. 3, 2019, which is the National Stage ofInternational Application No. PCT/JP2018/004083 filed on Feb. 6, 2018,which is based on and claims priority to Japanese Patent Application No.2017-120262, filed on Jun. 20, 2017. The contents of the applicationsare incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device.

BACKGROUND ART

A semiconductor device, such as a metal-oxide-semiconductor field-effecttransistor (MOSFET), is usually fixed by a mold resin or the like in astate in which a semiconductor chip and electrode terminals areconnected. For such a semiconductor device, various devices forenhancing the withstanding voltage are made.

PRIOR ART DOCUMENT Patent Document

[Patent Document 1] U.S. Pat. No. 7,199,461

SUMMARY OF THE INVENTION

According to one aspect of the present embodiment, a semiconductordevice includes: a first electrode terminal; a second electrodeterminal; a semiconductor element having an electrode on one surfaceconnected to one surface of the first electrode terminal; and a wirethat connects an electrode on the other surface of the semiconductorelement and the second electrode terminal. Further, the semiconductordevice includes a resin portion formed of an insulator covering thesemiconductor element, a part of the second electrode terminal, and theone surface of the first electrode terminal, wherein a chamfered portionis formed on at least one of end portions where the first electrodeterminal and the second electrode terminal face each other.

FIG. 1A is a top view of a semiconductor device;

FIG. 1B is a bottom view of the semiconductor device;

FIG. 1C is a side view of the semiconductor device;

FIG. 2 is a cross-sectional view of the semiconductor device;

FIG. 3 is an explanatory diagram of the semiconductor device;

FIG. 4A is a top view of a semiconductor device according to one aspectof the present disclosure;

FIG. 4B is a bottom view of the semiconductor device according to oneaspect of the present disclosure;

FIG. 4C is a side view of the semiconductor device according to oneaspect of the present disclosure;

FIG. 5 is a cross-sectional view of the semiconductor device accordingto one aspect of the present disclosure;

FIG. 6 is an explanatory diagram of the semiconductor device accordingto one aspect of the present disclosure;

FIG. 7 is an explanatory diagram of a semiconductor device used incomparison;

FIG. 8 is a diagram illustrating a result of a breakdown voltage test ofthe semiconductor device illustrated in FIGS. 1A to 1C;

FIG. 9 is a diagram illustrating a result of a breakdown voltage test ofthe semiconductor device according to one aspect of the presentdisclosure; and

FIG. 10 is a structural diagram of a semiconductor device according toanother aspect of the present disclosure.

EMBODIMENT FOR CARRYING OUT THE INVENTION

Although silicon is a typical semiconductor material that is used in asemiconductor device, in order to enhance the withstanding voltage, SiCor the like having a band gap wider than that of Si may be used. In sucha semiconductor device, a high withstanding voltage is required from astructural point of view. Accordingly, the present disclosure has anobject to provide a semiconductor device having a high withstandingvoltage.

In the following, an embodiment to be carried out will be described.

DESCRIPTION OF EMBODIMENT OF THE PRESENT DISCLOSURE

To begin with, aspects of the present disclosure are listed anddescribed below. In the following description, the same referencecharacters are allotted to the same or corresponding elements and thesame descriptions thereof are not repeated.

[1] A semiconductor device according to one aspect of the presentdisclosure includes: a first electrode terminal; a second electrodeterminal; a semiconductor element having an electrode on one surfaceconnected to one surface of the first electrode terminal; a wire thatconnects an electrode on the other surface of the semiconductor elementand the second electrode terminal; and a resin portion formed of aninsulator covering the semiconductor element, a part of the secondelectrode terminal, and the one surface of the first electrode terminal,wherein a chamfered portion is formed on at least one of end portionswhere the first electrode terminal and the second electrode terminalface each other.

The inventor of the present application has studied that in a case wherea high voltage is applied between a first electrode terminal and asecond electrode terminal, dielectric breakdown or discharging tends tooccur at a portion where the first electrode terminal and the secondelectrode terminal covered by a resin portion face each other. As aresult, it has been conceived and confirmed by experiments, simulations,and the like that such dielectric breakdown or discharging tends tooccur because the portion where the first electrode terminal and thesecond electrode terminal face each other is substantially right angleor sharply angled, and that there is a possibility that the withstandingvoltage may be enhanced by chamfering this portion into a C-surface or aR-surface. The semiconductor device according to one aspect of thepresent disclosure is based on the result obtained as described, and thewithstanding voltage of the semiconductor device can be enhanced with arelatively easy means.

[2] A chamfered portion is formed on both of the end portions where thefirst electrode terminal and the second electrode terminal face eachother.

[3] The chamfered portion is a C-surface.

[4] The chamfered portion is a R-surface.

[5] The chamfered portion is a flat surface.

[6] The chamfered portion is a rounded surface.

[7] The semiconductor device includes a third electrode terminal,wherein the semiconductor element is a unipolar transistor, the firstelectrode terminal is a drain electrode terminal, the second electrodeterminal is a source electrode terminal, and the third electrodeterminal is a gate electrode terminal, and the third electrode terminalis connected by another wire to another electrode on the other surfaceof the semiconductor element.

[8] The semiconductor device includes a third electrode terminal,wherein the semiconductor element is a bipolar transistor, the firstelectrode terminal is a collector electrode terminal, the secondelectrode terminal is an emitter electrode terminal, and the thirdelectrode terminal is a base electrode terminal, and the third electrodeterminal is connected by another wire to another electrode on the othersurface of the semiconductor element.

[9] The semiconductor device includes a third electrode terminal,wherein the semiconductor element is an IGBT, the first electrodeterminal is a collector electrode terminal, the second electrodeterminal is an emitter electrode terminal, and the third electrodeterminal is a gate electrode terminal, and the third electrode terminalis connected by another wire to another electrode on the other surfaceof the semiconductor element.

[10] The semiconductor element is a diode, and the first electrodeterminal is a cathode electrode terminal and the second electrodeterminal is an anode electrode terminal.

[11] The semiconductor element is formed of SiC.

[12] A portion of the other surface of the first electrode terminal isalso covered by the resin portion.

DETAILS OF EMBODIMENT OF THE PRESENT DISCLOSURE

In the following, an embodiment of the present disclosure (which ishereinafter referred to as the “present embodiment”) will be describedin detail, but the present embodiment is not limited to the following.

A semiconductor device according to the present embodiment will bedescribed in comparison with a semiconductor device different from thepresent embodiment.

FIG. 1 to FIG. 3 are a semiconductor device that is fixed by a moldresin or the like in a state in which a semiconductor chip and electrodeterminals are connected, which is the semiconductor device having astructure in which the semiconductor chip is formed by a MOSFET. Notethat FIG. 1A is a top view of the semiconductor device that is fixed bythe mold resin or the like in a state in which the semiconductor chipand the electrode terminals are connected, FIG. 1B is a bottom view, andFIG. 1C is a side view. FIG. 2 is a cross-sectional view taken alongdotted line 1A-1B in FIG. 1A, and FIG. 3 is a top view of thissemiconductor device in which the mold resin is removed. Note that inFIG. 2 and FIG. 3 , the size of the semiconductor device is enlarged forconvenience.

The semiconductor device 10 includes a gate electrode terminal 11, asource electrode terminal 12, and a plate-shaped drain electrodeterminal 13 that is a die pad. With respect to a semiconductor chip 20,a drain electrode pad side of the semiconductor chip 20 is mounted onthe drain electrode terminal 13 and is joined by solder or the like.Also, a gate electrode pad 21 of the semiconductor chip 20 is connectedto the gate electrode terminal 11 by a bonding wire 31 or the like, anda source electrode pad 22 is connected to the source electrode terminal12 by a bonding wire 32 or the like.

In this semiconductor device 10, the drain electrode terminal 13 and thegate electrode terminal 11 and the source electrode terminal 12 arearranged on different sides to enhance the withstanding voltage.Specifically, the drain electrode terminal 13 is arranged on the Y1direction side, and the gate electrode terminal 11 and the sourceelectrode terminal 12 are arranged on the Y2 direction side. Therefore,the drain electrode terminal 13 and the gate electrode terminal 11 faceeach other and the drain electrode terminal 13 and the source electrodeterminal 12 face each other as illustrated in FIG. 2 and the like.

The gate electrode terminal 11, the source electrode terminal 12, thedrain electrode terminal 13 that is a die pad are formed of Cu (copper),a copper alloy, or the like and may be partially or fully plated with Ni(nickel). The semiconductor chip 20 is formed of a semiconductormaterial such as Si or SiC. In order to obtain the semiconductor device10 having a high withstanding voltage, the semiconductor material ispreferably formed of SiC or the like having a band gap wider than thatof Si. Other than a field effect transistor, such as a MOSFET, thesemiconductor chip 20 may be a bipolar transistor, a diode, or the like.

One surface of the semiconductor chip 20, on which a drain electrode padof the semiconductor chip 20 is formed, is connected by solder or thelike to one surface 13 a that is a surface of the drain electrodeterminal 13. Thereby, the drain electrode pad of the semiconductor chip20 is electrically connected to the drain electrode terminal 13.

Also, the gate electrode pad 21 provided on the exposed other surface ofthe semiconductor chip 20 is connected by the bonding wire 31 to aconnection portion 11 a on the drain electrode terminal 13 side of thegate electrode terminal 11. Also, the source electrode pad 22 isconnected by the bonding wire 32 to a connection portion 12 a on thedrain electrode terminal 13 side of the source electrode terminal 12.Note that in the present application, the semiconductor chip 20 may bedescribed as a semiconductor device and the bonding wires 31 and 32 maybe described as wires.

Such a semiconductor chip 20 mounted on the drain electrode terminal 13,the connection portion 11 a of the gate electrode terminal 11, and theconnection portion 12 a of the source electrode terminal 12 are coveredby a resin portion 40 formed of a resin material such as a mold resin,as illustrated in FIG. 1 and the like. Accordingly, one surface 13 athat is a surface of the drain electrode terminal 13, on which thesemiconductor chip 20 is mounted, is covered by the resin portion 40,and the other surface 13 b is exposed.

In the semiconductor device 10, as illustrated in FIG. 2 , between thesource electrode terminal 12 and the drain electrode terminal 13, adistance L_(Y1) in the Y1-Y2 direction is about 0.3 mm and a distanceL_(Z1) in the Z1-Z2 direction is about 1.3 mm.

The dielectric withstanding voltage of such a semiconductor device 10 isabout 5 kV, and when a voltage higher than this is applied, thesemiconductor device is dielectric broken down due to discharge. In sucha semiconductor device 10, a discharge in a case where a high voltage isapplied is likely to occur, inside the resin portion 40, between thedrain electrode terminal 13 and the source electrode terminal 12, andoccurs, outside the resin portion 40, through the surface of the resinportion 40 between the source electrode terminal 12 and the drainelectrode terminal 13.

A case inside the resin portion 40 will be described in more detail.Inside the resin portion 40, an end portion 13 c closest to the sourceelectrode terminal 12 of the drain electrode terminal 13, i.e., the endportion 13 c in the Z1 direction and in the Y2 direction of the drainelectrode terminal 13 is angled at a substantially right angle.Similarly, an end portion 12 c closest to the drain electrode terminal13 of the source electrode terminal 12, i.e., the end portion 12 c inthe Z2 direction and in the Y1 direction of the source electrodeterminal 12 is angled at a substantially right angle.

The electric field strength is high at a portion whose corner is angledat a substantially right angle, such as at the end portion 13 c of thedrain electrode terminal 13 and at the end portion 12 c of the sourceelectrode terminal 12. Therefore, it is considered that when thepotential difference between the drain electrode terminal 13 and thesource electrode terminal 12 is large, the electric field isconcentrated and a discharge occurs between the end portion 13 c of thedrain electrode terminal 13 and the end portion 12 c of the sourceelectrode terminal 12.

(Semiconductor Device)

Next, a semiconductor device according to the present embodiment will bedescribed with reference to FIG. 4 to FIG. 6 . Note that FIG. 4A is anexternal top view of the semiconductor device according to the presentembodiment, FIG. 4B is a bottom view, and FIG. 4C is a side view. FIG. 5is a cross-sectional view taken along dotted line 4A-4B in FIG. 4A, andFIG. 6 is a top view of this semiconductor device according to thepresent embodiment in which the mold resin is removed. Note that in FIG.5 and FIG. 6 are enlarged for convenience.

According to the present embodiment, a semiconductor device 110 includesa gate electrode terminal 111, a source electrode terminal 112, and aplate-shaped drain electrode terminal 113 that is a die. With respect toa semiconductor chip 20, a drain electrode pad side of the semiconductorchip 20 is mounted on the drain electrode terminal 113 and is joined bysolder or the like. Thus, the drain electrode pad of the semiconductorchip 20 is electrically connected to the drain electrode terminals 113.Note that the drain electrode terminal 113 may be described as a firstelectrode terminal, the source electrode terminal 112 may be describedas a second electrode terminal, and the gate electrode terminal 111 maybe described as a third electrode terminal.

Also, a gate electrode pad 21 of the semiconductor chip 20 is connectedto the gate electrode terminal 111 by a bonding wire 31 or the like, anda source electrode pad 22 is connected to the source electrode terminal12 by a bonding wire 32 or the like. In the semiconductor device 110according to the present embodiment, the drain electrode terminal 113and the gate electrode terminal 111 and the source electrode terminal112 are arranged on different sides to enhance the withstanding voltage.Specifically, the drain electrode terminal 113 is arranged on the Y1direction side, and the gate electrode terminal 111 and the sourceelectrode terminal 112 are arranged on the Y2 direction side.Accordingly, as illustrated in FIG. 5 and the like, the drain electrodeterminal 113 and the gate electrode terminal 111 face each other thedrain electrode terminal 113 and the source electrode terminal 112 faceeach other.

The gate electrode terminal 111, the source electrode terminal 112, andthe drain electrode terminal 113, which is a die, are formed of Cu, acopper alloy, or the like and have a surface plated with Ni.

One surface of the semiconductor chip 20, on which a drain electrode padof the semiconductor chip 20 is formed, is connected by solder or thelike to one surface 113 a that is a surface of the drain electrodeterminal 113. Also, the gate electrode pad 21 provided on the exposedother surface of the semiconductor chip 20 is connected by the bondingwire 31 to a connection portion 111 a on the drain electrode terminal 13side of the gate electrode terminal 111. Also, the source electrode pad22 is connected by the bonding wire 32 to a connection portion 112 a onthe drain electrode terminal 13 side of the source electrode terminal112. Note that the bonding wires 31 and 32 are formed of aluminum orcopper.

In the semiconductor device 110 according to the present embodiment,both one surface 113 a and the other surface 113 b of such a drainelectrode terminal 113 are covered by a resin portion 140 formed of aresin material such as a mold resin. Thus, the semiconductor chip 20mounted on the drain electrode terminal 113, the connection portion 111a of the gate electrode terminal 111, and the connection portion 112 aof the source electrode terminal 112 are covered by the resin portion140 formed of a resin material such as a mold resin.

In the present embodiment, the creepage distance can be increased bypartially covering the other surface 113 b of the drain electrodeterminal 113 with the resin portion 140. That is, the distance via thesurface of the resin portion 140 between the source electrode terminal112 and the other surface 113 b of the drain electrode terminal 113 canbe increased.

Further, in the semiconductor device 110 according to the presentembodiment, on the Y2 direction side that is the direction away from thedrain electrode terminal 113, the gate electrode terminal 111 is coveredby a resin portion 140 a, and the source electrode terminal 112 iscovered by a resin portion 140 b, as illustrated in FIG. 4 and the like.Thereby, the creepage distance between the drain electrode terminal 113and the source electrode terminal 112 and the creepage distance betweenthe drain electrode terminal 113 and the gate electrode terminal 111 canbe further extended, and the withstanding voltage can be enhanced.

Also, in the semiconductor device 110 according to the presentembodiment, as illustrated in FIG. 5 , between the source electrodeterminal 112 and the drain electrode terminal 113, a distance L_(Y2) inthe Y1-Y2 direction is about 1.3 mm and a distance L_(Z2) in the Z1-Z2direction is about 1.3 mm. In addition, an end portion 113 c closest tothe source electrode terminal 112 of the drain electrode terminal 113,i.e., the end portion 113 c in the Z1 direction and the end portion 113c in the Y2 direction of the drain electrode terminal 113 is chamferedinto a C-surface or an R-surface. For example, the end portion 113 c ischamfered with a C0.3 mm.

Also, an end portion 112 c closest to the drain electrode terminal 113of the source electrode terminal 112, i.e., the end portion 112 c thatis the end in the Z2 direction and is the end in the Y1 direction of thesource electrode terminal 112 is chamfered into a C-surface or anR-surface. For example, the end portion 112 c is chamfered with a C0.2mm. Note that the gate electrode terminal 111 is also chamfered at anend portion that is the end in the Z2 direction and that is the end inthe Y1 direction.

As described above, by chamfering the portions where the sourceelectrode terminal 112 and the drain electrode terminal 113 are closestto each other into a C-surface or a R-surface, the electric fieldstrength at the portions can be kept low and the electric fieldconcentration can be reduced. That is, at the source electrode terminal112 and the drain electrode terminal 113, by chamfering substantiallyright angle corners, where the electric field strength increases, into aC-surface or a R-surface, the electric field intensity near the cornerscan be kept low and the electric field concentration can be reduced.

Thus, results of simulations performed with respect to the electricfield strength in a case in which the end portion 112 c of the sourceelectrode terminal 112 and the end portion 113 c of the drain electrodeterminal 113 are chamfered to form a C-surface or a R-surface will bedescribed. In the simulation, it is assumed that, between the sourceelectrode terminal and the drain electrode terminal, the distance isapproximately 1.3 mm in the Y1-Y2 direction and the distance isapproximately 1.3 mm in the Z1-Z2 direction. Also, it is assumed that aDC voltage of 0 V is applied to the source electrode terminal and a DCvoltage of 11 kV is applied to the drain electrode terminal. Also, it isassumed that a resin portion with a dielectric constant of 4.2 coversbetween the source electrode terminal and the drain electrode terminal,and the end of the drain electrode terminal closest to the sourceelectrode terminal is set to C0.3 mm.

Under these conditions, the maximum electric field strength in thevicinity of the end portion of the source electrode terminal when theshape of the end portion of the source electrode terminal closest to thedrain electrode terminal was obtained by simulation. Specifically,simulations were performed for the cases where the shape of the endportion the source electrode terminal was no chamfered (right angle),C0.1 mm, C0.2 mm, R0.1 mm, and R0.2 mm. The results are indicated inTable 1.

Note that “C” means C chamfering, and “R” means R chamfering. Also, Cchamfering makes a flat surface by removing a corner to be an endportion, and C0.1 mm indicates a distance from the corner of an endportion before being removed to the end of the removed portion. Further,R chamfering makes a rounded surface by removing a corner to be an endportion, and R0.1 mm indicates that a R-chamfered surface becomes arounded surface whose radius of curvature is 0.1 mm. In the presentapplication, a portion where C chamfering or R chamfering is performedat a corner of an end portion may be described as a chamfered portion.Further, the method of forming a chamfered portion is not limited to acase of directly removing the corner of an end portion. A chamferedportion may be formed using a mold or the like in which a portioncorresponding to the chamfered portion is formed.

TABLE 1 SHAPE OF END MAXIMUM ELECTRIC PORTION OF FIELD STRENGTH NEARELECTRIC SOURCE END PORTION OF FIELD ELECTRODE SOURCE ELECTRODEREDUCTION TERMINAL TERMINAL [kV/mm] EFFECT RIGHT ANGLE 11.61 — C0.1 mm10.05 13% C0.2 mm 9.69 17% R0.1 mm 10.55  9% R0.2 mm 9.49 18%

As indicated in Table 1, in the case where the shape of the end portionof the source electrode terminal was not chamfered (was right angle),the maximum electric field strength near the end portion of the sourceelectrode terminal was approximately 11.61 kV/mm. Also, in the casewhere the shape of the end portion of the source electrode terminal wasC0.1 mm, the maximum electric field strength near the end portion of thesource electrode terminal was approximately 10.05 kV/mm, and theelectric field strength can be reduced by approximately 13% incomparison with the case where the shape of the end portion is rightangle. Also, in the case where the shape of the end portion of thesource electrode terminal was C0.2 mm, the maximum electric fieldstrength near the end portion of the source electrode terminal wasapproximately 9.69 kV/mm, and the electric field strength can be reducedby approximately 17% in comparison with the case where the shape of theend portion is right angle.

Also, in the case where the shape of the end portion of the sourceelectrode terminal was R0.1 mm, the maximum electric field strength nearthe end portion of the source electrode terminal was approximately 10.55kV/mm, and the electric field strength can be reduced by approximately9% in comparison with the case where the shape of the end portion isright angle. Also, in the case where the shape of the end portion of thesource electrode terminal was R0.2 mm, the maximum electric fieldstrength near the end portion of the source electrode terminal wasapproximately 9.49 kV/mm, and the electric field strength can be reducedby approximately 18% in comparison with the case where the shape of theend portion is right angle.

Further, according to the present embodiment, as illustrated in FIG. 6 ,both ends in the X1-X2 direction on the gate electrode terminal 111 sideand on the drain electrode terminal 113 side of the source electrodeterminal 112 are chamfered into a C-surface or a R-surface. That is, anend portion 113 d, which is the end of the drain electrode terminal 113in the Y2 direction and is the end of the drain electrode terminal 113in the X1 direction, and an end portion 113 e, which is the end of thedrain electrode terminal 113 in the X2 direction, are chamfered into aC-surface or a R-surface. For example, the end portions 113 d and 113 eare chamfered with a C1.5 mm.

Further, both ends in the X1-X2 direction on the drain electrodeterminal 113 side of the gate electrode terminal 111 are chamfered tointo a C-surface or the R-surface. That is, an end portion 111 d, whichis the end of the gate electrode terminal 111 in the Y1 direction and isthe end of the gate electrode terminal 111 in the X1 direction, and anend portion 11 e, which is the end of the gate electrode terminal 111 inthe X2 direction, are chamfered into a C-surface or a R-surface. Forexample, the end portions 111 d and 111 e are chamfered with a C0.3 mm.

Also, both ends in the X1-X2 direction on the drain electrode terminal113 side of the source electrode terminal 112 are chamfered into aC-surface or a R-surface. That is, an end portion 112 d, which is theend of the source electrode terminal 112 in the Y1 direction and is theend of the source electrode terminal 112 in the X1 direction, and an endportion 112 e, which is the end of the source electrode terminal 112 inthe X2 direction, are chamfered into a C-surface or a R-surface. Forexample, the end portions 112 d and 112 e are chamfered with a C0.3 Mm.

(Experimental Results)

Next, the results of a voltage breakdown test in a case where thesemiconductor device 110 according to the present embodiment and thesemiconductor device illustrated in FIG. 7 were actually prepared and avoltage was applied between the source and the drain will be described.Note that in the semiconductor device illustrated in FIG. 7 , the gateelectrode terminal 11, the source electrode terminal 12, and the drainelectrode terminal 13 that are not chamfered at their end portions areused, but the resin portion 140 covers a portion of the other surface 13b of the drain electrode terminal 13. Accordingly, the semiconductordevice illustrated in FIG. 7 has an internal structure similar to thatillustrated in FIG. 3 , but has an external shape similar to that of thesemiconductor device according to the present embodiment as illustratedin FIG. 4 and the like.

FIG. 8 indicates the result of the breakdown voltage test in a casewhere a voltage was applied between the source and the drain of thesemiconductor device 110 according to the present embodiment illustratedin FIG. 4 to FIG. 6 , and FIG. 9 indicates the result of the breakdownvoltage test in a case where a voltage was applied between the sourceand the drain of the semiconductor device of the structure illustratedin FIG. 7 . Note that the voltage applied between the source and thedrain is an AC voltage of 50 Hz.

As illustrated in FIG. 8 and FIG. 9 , in the semiconductor deviceaccording to the present embodiment, the AC effective value of thewithstanding voltage was 14 kV (peak 19.8 kV). In contrast, in thesemiconductor device of the structure illustrated in FIG. 7 , the ACeffective value of the withstanding voltage was 10 kV (peak 14.1 kV).Thus, the withstanding voltage of the semiconductor device according tothe present embodiment is higher than that of the semiconductor deviceillustrated in FIG. 7 because a C-surface is formed at the end portion113 c of the drain electrode terminal 113 on the source electrodeterminal 112 side and at the end portion 112 c of the source electrodeterminal 112 of the drain electrode terminal 113.

Note that the withstanding voltage of the semiconductor device of thestructure illustrated in FIG. 7 is higher than that of the semiconductordevice of the structure illustrated in FIG. 1 to FIG. 3 . This isbecause the creepage distance of the drain electrode terminal 13 and thesource electrode terminal 12 can be increased by the resin portion 140also covering the other surface 13 b of the drain electrode terminal 13.That is, by also covering the other surface 13 b of the drain electrodeterminal 13 with the resin portion 140, the creepage distance can bemade longer than that of the semiconductor device of the structureillustrated in FIG. 1 to FIG. 3 , and the withstanding voltage can beenhanced. In the semiconductor device according to the presentembodiment, because the end portion 113 c of the drain electrodeterminal 113 on the source electrode terminal 112 side and the endportion 112 c of the source electrode terminal 112 on the drainelectrode terminal 113 side are a C-surface or a R-surface, thewithstanding voltage can be further enhanced.

Although a case has been described above in which the semiconductor chip20 is a MOSFET, the semiconductor chip 20 may be another unipolartransistor. The semiconductor chip 20 may also be a bipolar transistor,an Insulated Gate Bipolar Transistor (IGBT), or the like. In the case ofa bipolar transistor, the first electrode terminal corresponding to thedrain electrode terminal 113 is a collector electrode terminal, thesecond electrode terminal corresponding to the source electrode terminal112 is an emitter electrode terminal, and the third electrode terminalcorresponding to the gate electrode terminal 111 is a base electrodeterminal. In the case of an IGBT, the first electrode terminalcorresponding to the drain electrode terminal 113 is a collectorelectrode terminal, the second electrode terminal corresponding to thesource electrode terminal 112 is an emitter electrode terminal, and thethird electrode terminal is the gate electrode terminal 111.

The semiconductor chip 20 may also be a diode or the like. In this case,as illustrated in FIG. 10 , the first electrode terminal correspondingto the drain electrode terminal 113 is a cathode electrode terminal 213,and the second electrode terminal corresponding to the source electrodeterminal 112 is an anode electrode terminal 212. A cathode electrodeformed on one surface of a semiconductor chip 220, which is a diode, isconnected by solder or the like on the surface of the cathode electrodeterminal 213, which is the first electrode terminal. An anode electrode221 formed on the other surface of the semiconductor chip 220 isconnected to the anode electrode terminal 212, which is the secondelectrode terminal, by a bonding wire 33. An end portion of a portion,facing the anode electrode terminal 212, of the cathode electrodeterminal 213 is chamfered into a C-surface or a R-surface similarly tothe drain electrode terminal 113. Also, an end portion of a portion,facing the cathode electrode terminal 213, of the anode electrodeterminal 212 is chamfered into a C-surface or a R-surface similarly tothe source electrode terminal 112. Note that although it is notillustrated in FIG. 10 , a structure may be employed in which thecathode electrode terminal 213 and the third electrode terminal 211 areconnected by a bonding wire or the like.

Although the embodiment has been described above in detail, it is notlimited to a specific embodiment, and various modifications and changescan be made within the scope described in claims.

DESCRIPTION OF THE REFERENCE NUMERALS

-   -   10 semiconductor device    -   20 semiconductor chip    -   21 gate electrode pad    -   22 source electrode pad    -   31, 32 bonding wire    -   110 semiconductor device    -   111 gate electrode terminal    -   111 a connection portion    -   111 c, 111 d, and 111 e end portion    -   112 source electrode terminal    -   112 a connection portion    -   112 c, 112 d, and 112 e end portion    -   113 drain electrode terminal    -   113 a one surface    -   113 b the other surface    -   113 c, 113 d, and 113 e end portion    -   140 resin portion

The invention claimed is:
 1. A semiconductor device comprising: a firstelectrode terminal of a die pad; a second electrode terminal of a lead;a semiconductor element having an electrode on one surface connected toone surface of the first electrode terminal; a wire that connects anelectrode on another surface of the semiconductor element and the secondelectrode terminal; a resin portion formed of an insulator covering thesemiconductor element, a part of the second electrode terminal, and theone surface of the first electrode terminal, wherein a height positionof the die pad differs from a height position of the lead, wherein oneside of the first electrode terminal and one side of the secondelectrode terminal face each other, where a spatial distance between thefirst electrode terminal and the second electrode terminal is shortest,and wherein the one side of the first electrode terminal is chamferedinto a C-surface or a R-surface to increase the spatial distance.
 2. Asemiconductor device comprising: a first electrode terminal of a diepad; a second electrode terminal of a lead; a semiconductor elementhaving an electrode on one surface connected to one surface of the firstelectrode terminal; a wire that connects an electrode on another surfaceof the semiconductor element and the second electrode terminal; a resinportion formed of an insulator covering the semiconductor element, apart of the second electrode terminal, and the one surface of the firstelectrode terminal, wherein a height position of the die pad differsfrom a height position of the lead, wherein one side of the firstelectrode terminal and one side of the second electrode terminal faceeach other, where a spatial distance between the first electrodeterminal and the second electrode terminal is shortest, and wherein theone side of the second electrode terminal is chamfered into a C-surfaceor a R-surface to increase the spatial distance.
 3. A semiconductordevice comprising: a first electrode terminal of a die pad; a secondelectrode terminal of a lead; a semiconductor element having anelectrode on one surface connected to one surface of the first electrodeterminal; a wire that connects an electrode on another surface of thesemiconductor element and the second electrode terminal; a resin portionformed of an insulator covering the semiconductor element, a part of thesecond electrode terminal, and the one surface of the first electrodeterminal, wherein a height position of the die pad differs from a heightposition of the second electrode terminal, wherein one side of the firstelectrode terminal and one side of the second electrode terminal faceeach other, where a spatial distance between the first electrodeterminal and the second electrode terminal is shortest, and wherein theone side of the first electrode terminal is chamfered into a C-surfaceor a R-surface to increase the spatial distance.
 4. A semiconductordevice comprising: a first electrode terminal of a die pad; a secondelectrode terminal of a lead; a semiconductor element having anelectrode on one surface connected to one surface of the first electrodeterminal; a wire that connects an electrode on another surface of thesemiconductor element and the second electrode terminal; a resin portionformed of an insulator covering the semiconductor element, a part of thesecond electrode terminal, and the one surface of the first electrodeterminal, wherein a height position of the die pad differs from a heightposition of the second electrode terminal, wherein one side of the firstelectrode terminal and one side of the second electrode terminal faceeach other, where a spatial distance between the first electrodeterminal and the second electrode terminal is shortest, and wherein theone side of the second electrode terminal is chamfered into a C-surfaceor a R-surface to increase the spatial distance.
 5. The semiconductordevice according to claim 3, wherein the chamfered surface is aC-surface.
 6. The semiconductor device according to claim 3, wherein thechamfered surface is a R-surface.
 7. The semiconductor device accordingto claim 3, wherein the chamfered surface is a flat surface.
 8. Thesemiconductor device according to claim 3, wherein the chamfered surfaceis a rounded surface.
 9. The semiconductor device according to claim 3,further comprising: a third electrode terminal, wherein thesemiconductor element is a unipolar transistor, wherein the firstelectrode terminal is a drain electrode terminal, the second electrodeterminal is a source electrode terminal, and the third electrodeterminal is a gate electrode terminal, and wherein the third electrodeterminal is connected by another wire to another electrode on saidanother surface of the semiconductor element.
 10. The semiconductordevice according to claim 3, further comprising: a third electrodeterminal, wherein the semiconductor element is a bipolar transistor,wherein the first electrode terminal is a collector electrode terminal,the second electrode terminal is an emitter electrode terminal, and thethird electrode terminal is a base electrode terminal, and wherein thethird electrode terminal is connected by another wire to anotherelectrode on said another surface of the semiconductor element.
 11. Thesemiconductor device according to claim 3, further comprising: a thirdelectrode terminal, wherein the semiconductor element is an IGBT,wherein the first electrode terminal is a collector electrode terminal,the second electrode terminal is an emitter electrode terminal, and thethird electrode terminal is a gate electrode terminal, and wherein thethird electrode terminal is connected by another wire to anotherelectrode on said another surface of the semiconductor element.
 12. Thesemiconductor device according to claim 3, wherein the semiconductorelement is a diode, and wherein the first electrode terminal is acathode electrode terminal and the second electrode terminal is an anodeelectrode terminal.
 13. The semiconductor device according to claim 3,wherein the semiconductor element is formed of SiC.
 14. Thesemiconductor device according to claim 3, wherein a portion of anothersurface of the first electrode terminal is also covered by the resinportion.
 15. The semiconductor device according to claim 3, wherein theone side of the first electrode terminal and the one side of the secondelectrode terminal, which face each other, are chamfered into aC-surface or a R-surface in top view.
 16. The semiconductor deviceaccording to claim 4, wherein the chamfered surface is a C-surface. 17.The semiconductor device according to claim 4, wherein the chamferedsurface is a R-surface.
 18. The semiconductor device according to claim4, wherein the chamfered surface is a flat surface.
 19. Thesemiconductor device according to claim 4, wherein the chamfered surfaceis a rounded surface.
 20. The semiconductor device according to claim 4,further comprising: a third electrode terminal, wherein thesemiconductor element is a unipolar transistor, wherein the firstelectrode terminal is a drain electrode terminal, the second electrodeterminal is a source electrode terminal, and the third electrodeterminal is a gate electrode terminal, and wherein the third electrodeterminal is connected by another wire to another electrode on saidanother surface of the semiconductor element.
 21. The semiconductordevice according to claim 4, further comprising: a third electrodeterminal, wherein the semiconductor element is a bipolar transistor,wherein the first electrode terminal is a collector electrode terminal,the second electrode terminal is an emitter electrode terminal, and thethird electrode terminal is a base electrode terminal, and wherein thethird electrode terminal is connected by another wire to anotherelectrode on said another surface of the semiconductor element.
 22. Thesemiconductor device according to claim 4, further comprising: a thirdelectrode terminal, wherein the semiconductor element is an IGBT,wherein the first electrode terminal is a collector electrode terminal,the second electrode terminal is an emitter electrode terminal, and thethird electrode terminal is a gate electrode terminal, and wherein thethird electrode terminal is connected by another wire to anotherelectrode on said another surface of the semiconductor element.
 23. Thesemiconductor device according to claim 4, wherein the semiconductorelement is a diode, and wherein the first electrode terminal is acathode electrode terminal and the second electrode terminal is an anodeelectrode terminal.
 24. The semiconductor device according to claim 4,wherein the semiconductor element is formed of SiC.
 25. Thesemiconductor device according to claim 4, wherein a portion of anothersurface of the first electrode terminal is also covered by the resinportion.
 26. The semiconductor device according to claim 4, wherein theone side of the first electrode terminal and the one side of the secondelectrode terminal, which face each other, are chamfered into aC-surface or a R-surface in top view.